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Cover image for book Dopants and Defects in Semiconductors

Dopants and Defects in Semiconductors

By:Matthew D. McCluskey; Eugene E. Haller
Publisher:Taylor & Francis
Print ISBN:9780367781439
eText ISBN:9781351977975
Edition:2
Copyright:2018
Format:Reflowable

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Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics … an easy reading, broad introductory overview of the field" ―Materials Today "… well written, with clear, lucid explanations …" ―Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

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