Back to results
Cover image for book Nonvolatile Memory Design

Nonvolatile Memory Design

Magnetic, Resistive, and Phase Change
By:Hai Li; Yiran Chen
Publisher:Taylor & Francis
Print ISBN:9781138076631
eText ISBN:9781351834193
Edition:1
Copyright:2012
Format:Reflowable

eBook Features

Instant Access

Purchase and read your book immediately

Read Offline

Access your eTextbook anytime and anywhere

Study Tools

Built-in study tools like highlights and more

Read Aloud

Listen and follow along as Bookshelf reads to you

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

• 2026 © SAU Tech Bookstore. All Rights Reserved.