Science and Technology of Defects in Silicon
| By: | Ammerlaan, C.A.J.; Chantre, A.; Wagner, P. |
| Publisher: | Elsevier S & T |
| Print ISBN: | 9780444886194 |
| eText ISBN: | 9780080983646 |
| Edition: | 0 |
| Format: | Page Fidelity |
eBook Features
Instant Access
Purchase and read your book immediately
Read Offline
Access your eTextbook anytime and anywhere
Study Tools
Built-in study tools like highlights and more
Read Aloud
Listen and follow along as Bookshelf reads to you
This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.
In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.